Growth of Directly Transferable In2O3 Nanowire Mats for Transparent Thin‐film Transistor Applications

Peeling off nanowire mats with tweezers? Directly transferable In2O3 nanowire mats are synthesized via a simple laser-ablation chemical vapor deposition method (see figure). The mats are used as active channels to make transparent thin-film transistors with high performance. Detailed facts of importance to specialist readers are published as ”Supporting Information”. Such documents are peer-reviewed, but not copy-edited or typeset. They are made available as submitted by the authors. Please note: The publisher is not responsible for the content or functionality of any supporting information supplied by the authors. Any queries (other than missing content) should be directed to the corresponding author for the article.