Hydrogen in As‐Grown and Annealed ZnO Films Grown by Atomic Layer Deposition

The origin of unintentional hydrogen incorporation in ZnO films grown by thermal atomic layer deposition is investigated by comparing layers deposited using H 2 O and D 2 O as oxygen precursors. Secondary ion mass spectroscopy measurements of as‐grown and 800 °C annealed layers provide evidence that the hydrogen contribution originating from the oxygen precursor is weakly chemically bound and is mostly removed by rapid thermal annealing conducted at 800 °C for 3 min in oxygen atmosphere. On the other hand, the remaining hydrogen introduced by ethyl groups originating from the metalorganic zinc precursor withstands such treatment.