Material-dependent electric field enhancement of photoconductivity in gallium arsenide

Pulsed laser measurements on as-grown and thermally processed gallium arsenide show a material dependent photoconductivity. The pulsed voltage measurements on as-grown material provide evidence of a gain mechanism. An understanding of the photocurrent gain on the nature of the bulk gallium arsenide may be useful in explaining the lock-on phenomenon and in designing high power GaAs photoconductive devices.