中间层
通过硅通孔
三维集成电路
硅
材料科学
计算机断层摄影术
电镀(地质)
集成电路封装
电子工程
电子包装
断层摄影术
计算机科学
集成电路
光电子学
工程类
光学
复合材料
地质学
物理
地球物理学
放射科
蚀刻(微加工)
医学
图层(电子)
作者
Holger Roth,Zhenhui He,Thomas Mayer
出处
期刊:
日期:2009-12-01
卷期号:: 438-441
被引量:20
标识
DOI:10.1109/eptc.2009.5416506
摘要
Through silicon vias (TSV) as used in 3D integrated electronic packages were inspected non-destructively by highly resolving nanofocus computed tomography (nanoCT). In particular, in the TSVs plating voids were visualised and quantitatively evaluated by numerical processing of the resulting volumetric data. The nanoCT technology is outlined and further applications such as interposers etc. are considered.
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