反铁磁性
旋转
材料科学
成核
铁磁性
凝聚态物理
活化能
磁滞
领域(数学分析)
原子力显微镜
线性二色性
磁畴壁(磁性)
克尔效应
磁畴
磁化
结晶学
纳米技术
物理
热力学
化学
磁场
圆二色性
物理化学
非线性系统
数学分析
量子力学
数学
作者
Qian Li,Gang Chen,T. P.,Jianming Zhu,Alpha T. N’Diaye,Li Sun,Tianyu Gu,Y. Huo,Jianhui Liang,Ruhong Li,C. Won,Haifeng Ding,Z. Q. Qiu,Yizheng Wu
标识
DOI:10.1103/physrevb.91.134428
摘要
In contrast to the extensive study of domain reversal in ferromagnetic materials, the domain switching process in antiferromagnets is much less studied due to the difficulty of probing antiferromagnetic spins. Using a combination of hysteresis loop, Kerr microscope, and x-ray magnetic linear dichroism measurements, we investigated the antiferromagnetic (AFM) domain switching process in single crystalline Fe/CoO bilayers on MgO(001). We demonstrate that the CoO AFM switching is a Kolmogorov-Avrami process in which the thermal activation energy creates AFM domain nucleation centers which further expand by domain wall propagation. From the temperature- and thickness-dependent measurements, we are able to retrieve quantitatively the important parameter of the CoO AFM activation energy, which is shown to increase linearly with CoO thickness.
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