电场
带隙
双层
凝聚态物理
材料科学
单层
半导体
拉伤
密度泛函理论
吸收边
光电子学
宽禁带半导体
相(物质)
纳米技术
化学
计算化学
物理
量子力学
医学
生物化学
内科学
有机化学
膜
作者
A. Bafekry,Catherine Stampfl,Mosayeb Naseri,Mohamed M. Fadlallah,Mehrdad Faraji,Mitra Ghergherehchi,D. Gogova,S.A.H. Feghhi
摘要
Recently, a two-dimensional (2D) MoSi2N4 (MSN) structure has been successfully synthesized [Hong et al., Science 369(6504), 670–674 (2020)]. Motivated by this result, we investigate the structural, electronic, and optical properties of MSN monolayer (MSN-1L) and bilayer (MSN-2L) under the applied electric field (E-field) and strain using density functional theory calculations. We find that the MSN-2L is a semiconductor with an indirect bandgap of 1.60 (1.80) eV using Perdew–Burke–Ernzerhof (HSE06). The bandgap of MSN-2L decreases as the E-field increases from 0.1 to 0.6 V/Å and for larger E-field up to 1.0 V/Å the bilayer becomes metallic. As the vertical strain increases, the bandgap decreases; more interestingly, a semiconductor to a metal phase transition is observed at a strain of 12%. Furthermore, the optical response of the MSN-2L is in the ultraviolet (UV) region of the electromagnetic spectrum. The absorption edge exhibits a blue shift by applying an E-field or a vertical compressive strain. The obtained interesting properties suggest MSN-2L as a promising material in electro-mechanical and UV opto-mechanical devices.
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