Blue and green InGaN semiconductor lasers as light sources for displays

This paper reports the latest device performance of high-power blue and green Laser Diodes (LDs). The epitaxial structures of LDs including n-type, active and p-type layers were grown by metal organic chemical vapor deposition (MOCVD) on C-plane free-standing GaN substrates. And a ridge type structure and Electrodes of the n-type and p-type were formed. Front and rear mirror facets were obtained by cleavage at the m-plane surface. We optimized the epitaxial and the device structures for high efficiency, high optical output power and reliability. Every LD chip was mounted on a heat sink using a junction down method in a TO-Φ9 mm package for suppressing thermal resistance. A New developed 455 nm blue LD showed the optical output power and the voltage of 5.67 W and 3.93 V at the forward current of 3 A under Continuous Wave (CW) operation. The wall plug efficiency of the 455 nm blue LD was 48.1% at 3A. The wall plug efficiency of the high-power blue LD we developed is the highest reported so far. A new developed green LD at 525 nm showed the optical output power of 1.75 W and the wall plug efficiency of 21.2 % at the forward current of 1.9A. The optical output power, the voltage and the wall plug efficiency of a new 532 nm LD showed 1.53 W and 4.35 V, 18.5 % at the forward current of 1.9 A under CW operation. The peak wall plug efficiency of the 532 nm LD was 20 % at the optical output power of 1W.