Improvement of Low‐Temperature zT in a Mg3Sb2–Mg3Bi2 Solid Solution via Mg‐Vapor Annealing

Materials with high zT over a wide temperature range are essential for thermoelectric applications. n-Type Mg₃ Sb₂ -based compounds have been shown to achieve high zT at 700 K, but their performance at low temperatures (<500 K) is compromised due to their highly resistive grain boundaries. Syntheses and optimization processes to mitigate this grain-boundary effect has been limited due to loss of Mg, which hinders a sample's n-type dopability. A Mg-vapor anneal processing step that grows a sample's grain size and preserves its n-type carrier concentration during annealing is demonstrated. The electrical conductivity and mobility of the samples with large grain size follows a phonon-scattering-dominated T^-3/2 trend over a large temperature range, further supporting the conclusion that the temperature-activated mobility in Mg₃ Sb₂ -based materials is caused by resistive grain boundaries. The measured Hall mobility of electrons reaches 170 cm² V^-1 s^-1 in annealed 800 °C sintered Mg_{3 + δ} Sb_1.49 Bi_0.5 Te_0.01 , the highest ever reported for Mg₃ Sb₂ -based thermoelectric materials. In particular, a sample with grain size >30 mm has a zT 0.8 at 300 K, which is comparable to commercial thermoelectric materials used at room temperature (n-type Bi₂ Te₃ ) while reaching zT 1.4 at 700 K, allowing applications over a wider temperature scale.