Quasi-2-D Physical Modeling of GaN Microwave HEMTs for RF Applications

The dc and small-signal characterization of microwave gallium nitride (GaN)-based high-electron-mobility transistors (HEMTs) is described, using a new quasi-2-D (Q2D) physical model which allows fast, physics-based electronic and microwave simulation with predictive process variation for these devices at dc and RF frequencies for the first time, which is suitable for device design and development. The predicted results are compared to measured data of transistors intended for communications applications. The simulation uses a self-consistent Schrödinger–Poisson solver, coupled with current- and energy-continuity solutions for carrier transport. The simulator incorporates hot electrons, polarization, temperature dependence, and short-gate effects.