P-type β-Ga2O3 films were prepared by Zn-doping using RF magnetron sputtering

Zn-doped Ga2O3 films were prepared using RF magnetron sputtering method at various deposition temperatures. Hall measurement demonstrated the present Zn-doped β-Ga2O3 film was p-type conductivity. The XRD and XRF measurements showed the Zn dopant concentration increased with the decrease of temperature so that the position of the characteristic peak shifted to lower angles. The UV absorption spectra showed that the bandgaps became narrower with the doping concentration of Zn atom increasing. The pure and Zn-doped β-Ga2O3 films were used to fabricate the photodetectors with MSM structure, respectively. The photoelectric response measurements showed that the Zn-doped specimen manifested much lower dark-current and higher photo-to-dark current ratio, but slower photoresponse speed.