弯曲半径
材料科学
半径
弯曲
薄膜
弯曲分子几何
超导电性
复合材料
抗弯强度
电磁线圈
临界半径
临界电流
凝聚态物理
纳米技术
电气工程
物理
曲率
几何学
计算机科学
工程类
计算机安全
数学
作者
Takumu Iwanaka,Toshiaki Kusunoki,Hiroshi Kotaki,Motomune Kodama,Hideki Tanaka,A. Matsumoto,Shigeru Horii,Iwao Kawayama,Toshiya Doi
标识
DOI:10.35848/1347-4065/acb38f
摘要
Abstract Aiming to understand the bending characteristics of a MgB 2 thin-film wire and utilize the wire in the design of superconducting magnets, we examined the degradation of critical current density J c due to bending. Six short MgB 2 thin-film wires with a thickness of 1 μ m were prepared under the same deposition conditions. They were bent in different radii, and their J c were compared. The allowable bending radius at which J c does not degrade was 25.0 mm. As for MgB 2 thin-film wires, thickening the film effectively increases the engineering critical current density J e . On the basis of material mechanics, the allowable bending radius was estimated to be 25.5 mm when the film thickness increased to 10 μ m. The allowable bending radius of the MgB 2 thin-film wire is sufficiently smaller than the radius of a typical superconducting coil, so it is not considered to be a barrier to fabricating a coil with the wire.
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