Valleytronics公司
石墨烯
原子轨道
密度泛函理论
电子
凝聚态物理
级联
材料科学
物理
化学
纳米技术
量子力学
铁磁性
色谱法
自旋电子学
作者
Mitsuharu Uemoto,M. Nishiura,Tomoya Ono
标识
DOI:10.1088/1361-648x/ad0d26
摘要
valley to theK'valleys is completely suppressed in some defects. Using a large bipartite honeycomb cell (BHC) including several carbon atoms in a cell and replacing atomic orbitals with molecular orbitals in the tight-binding model, we demonstrate analytically and numerically that the symmetry between the A and B sites of the BHC contributes to the suppression of the intervalley transition. In addition, the universal rule for the atomic structures of the blisters suppressing the intervalley transition is derived. Furthermore, by introducing additional carbon atoms to graphenes to form blister defects, we can split the energies of the states at which resonant scattering occurs on theKandK'channel electrons. Because of this split, the fully valley-polarized current will be achieved by the local application of a gate voltage.
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