开尔文探针力显微镜
半导体
材料科学
欧姆接触
肖特基势垒
载流子
光电子学
电子转移
肖特基二极管
纳米技术
化学物理
化学
二极管
光化学
原子力显微镜
图层(电子)
作者
Chuanbiao Bie,Zheng Meng,Bowen He,Bei Cheng,Gang Liu,Bicheng Zhu
标识
DOI:10.1016/j.jmst.2023.07.019
摘要
Semiconductor/metal junctions are widely discussed in photocatalysis. However, there is a notable scarcity of systematic studies focusing on photogenerated charge carrier transfer in such junctions. Herein, CdS/Pt, CdS/Au, and CdS/Ag are synthesized to serve as model systems for investigating the charge carrier transfer in semiconductor/metal junctions. Kelvin probe force microscopy is employed to visualize the transfer of photogenerated carriers in these materials. The results show that the electron transfer behavior under illumination is related to the conduction band position of CdS and the Fermi level position of the metal. Moreover, Schottky junctions hinder the transfer of photogenerated electrons from CdS to Pt and Au, whereas ohmic contacts facilitate the transfer of photogenerated electrons from CdS to Ag. This work provides novel insights into the mechanisms governing the transfer of photogenerated carriers in semiconductor/metal junctions.
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