卤化物
化学计量学
带隙
激发
材料科学
相(物质)
混合(物理)
化学物理
化学
光电子学
物理化学
物理
无机化学
量子力学
有机化学
作者
Anthony Ruth,Halyna Okrepka,Prashant V. Kamat,Masaru Kuno
标识
DOI:10.1021/acs.jpcc.3c04708
摘要
Provided is a comprehensive description of a band gap thermodynamic model, which predicts and explains key features of photosegregation in lead-based, mixed-halide perovskites. The model gives a prescription for illustrating halide migration driven by photocarrier energies. Where possible, model predictions are compared with experimental results. Free energy derivations are provided for three assumptions: (1) halide mixing in the dark, (2) a fixed number of photogenerated carriers funneling to and localizing in low band gap inclusions of the alloy, and (3) the statistical occupancy of said inclusions from a bath of thermalized photocarriers in the parent material. Model predictions include excitation intensity (Iexc)-dependent terminal halide stoichiometries (xterminal), temperature-independent xterminal, excitation intensity thresholds (Iexc,threshold) below which photosegregation is suppressed, and reduced segregation in nanocrystals as compared to thin films. The model also offers insight into kinetically manipulating photosegregation rates via control of underlying mediators and rationalizes asymmetries in forward and reverse photosegregation rate constants/activation energies. What emerges is a cohesive framework for understanding ubiquitous photosegregation in mixed-halide perovskites and a rational basis by which to manage the phenomenon.
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