Improved artificial synapse performance of Pt/HfO2/BiFeO3/HfO2/TiN memristor through N2 annealing

A high-performance synaptic plasticity memristor based on Pt/HfO 2 /BiFeO 3 /HfO 2 /TiN structure was developed by magnetron sputtering technology, and the effects of N 2 annealing treatment on its resistance and synaptic bionic properties were studied. The results show that with the N 2 post annealing process, the memristor can exhibits excellent switching windows, outstanding uniformity and high durability. An improvement of ON/OFF resistance ratio of at least two orders of magnitude is achieved, and the pulse endurance can remain stable up to 10 6 s. Moreover, the basic synaptic biomimetic function is realized due to its excellent multi-level storage properties, and the conductivity of the memristor is modulated by multilayer perception (MLP) algorithm to simulate handwritten digital image recognition. Overall, its linearity and stability of the artificial synapse in the regulation process still have the space to be improved for the application, so it can be efficiently regulated by rapid thermal processing. It is convinced the tri-layer post-annealing HfO 2 -based devices hold the application potential of neuromorphic computing in the next generation memory devices.