Oxidation of GaAs substrates to enable β-Ga2O3 films for sensors and optoelectronic devices

A very simple and inexpensive method for growing β-Ga₂O₃ films by heating GaAs wafers at high temperature in a furnace was found to contribute to large-area, high-quality β-Ga₂O₃ nanoscale thin films as well as nanowires depending on the growth conditions. We present the material characterization results including the optical band gap, Schottky barrier height with metal (gold), field ionization and photoconductance of β-Ga₂O₃ film and nanowires.