Improved Electrical Properties of EHD Jet-Patterned MoS2 Thin-Film Transistors with Printed Ag Electrodes on a High-k Dielectric

Electrohydrodynamic (EHD) jet printing is known as a versatile method to print a wide viscosity range of materials that are impossible to print by conventional inkjet printing. Hence, with the understanding of the benefits of EHD jet printing, solution-based MoS2 and a high-viscosity Ag paste were EHD jet-printed for electronic applications in this work. In particular, printed MoS2 TFTs with a patterned Ag source and drain were successfully fabricated with low-k silica (SiO2) and high-k alumina (Al2O3) gate dielectrics, respectively. Eventually, the devices based on Al2O3 exhibited much better electrical properties compared to the ones based on SiO2. Interestingly, an improvement of around one order of magnitude in hysteresis was achieved for devices after changing the gate insulator from SiO2 to Al2O3. In effect, the results of this work for the printed MoS2 and the printed Ag source and drains for TFTs demonstrate a new approach for jet printing in the fabrication of electronic devices.