榫卯
记忆电阻器
计算机科学
人工智能
工程类
结构工程
电气工程
作者
Weiqi Dang,Yu Shen,Wei Wei,Chen Pan,Fanqiang Chen,Gong-Jie Ruan,Luo Yan,Ying Guo,Qiuyang Tan,J. Shi,Xing-Jian Yangdong,Sicheng Chen,Cong Wang,Yongqin Xie,Zaizheng Yang,Pengfei Wang,Shuang Wang,Li Zhong,Shaobo Cheng,Chao Zhu
出处
期刊:Science Advances
[American Association for the Advancement of Science]
日期:2025-05-01
卷期号:11 (18): eadu3309-eadu3309
被引量:15
标识
DOI:10.1126/sciadv.adu3309
摘要
In-memory computing hardware based on memristors has emerged as a promising option for scientific computing due to its large-scale parallel data processing capability. However, the nonuniformity issue of the memristors renders the practical deployment of in-memory computing hardware complex, requiring peripheral circuits to ensure the accuracy of scientific computing, thereby resulting in increased power consumption. Here, we present a mortise-tenon-shaped (MTS) memristor with ultrahigh uniformity by introducing a mortise-shaped h-BN flake on the HfO2 switching layer. The MTS memristor exhibits ultrasmall cycle-to-cycle (~2.5%) and device-to-device (~6.9%) variations compared to the HfO2 memristor without the MTS structure. Furthermore, we use the MTS memristors to build a partial differential equation solver and demonstrate a convergence speed of solving the Poisson equation five times faster than the solver based on the traditional HfO2 memristors. This work provides a promising approach for notably reducing the hardware resources required for fast and high-accuracy scientific computing.
科研通智能强力驱动
Strongly Powered by AbleSci AI