材料科学
计算机冷却
基质(水族馆)
电源模块
光电子学
功率(物理)
碳化硅
电子工程
电气工程
集成电路
电子设备和系统的热管理
工程类
机械工程
物理
复合材料
海洋学
量子力学
地质学
作者
Xinnan Sun,Min Chen,Jie Li,Fengze Hou,Yifei Du,Yucheng Wu,Bodong Li
标识
DOI:10.1109/tpel.2025.3563077
摘要
To fully leverage the advantages of silicon carbide (SiC) power devices, this study presents a substrate-embedded SiC power module with integrated liquid cooling. Four 1.2 kV SiC MOSFETs are embedded in an organic substrate and cooled via a direct bonded microchannel heatsink, within a packaging size of 20mm×20mm×2.4mm. This design achieves short electrical interconnection with significantly reduced parasitic parameters, and eliminates the need for thermal interface material (TIM), enhancing cooling efficiency. Through careful optimization, the parasitic inductances of the power loop and driving loop are minimized to below 155pH and 35pH, respectively. The proposed module outperforms the commercial TO-247-4 packaging, exhibiting faster switching speeds with turn-on and turn-off losses decreased by 12.7% and 10%, respectively. Furthermore, at a junction temperature rise of 150$^{\circ }$ C, the die heat flux of the embedded module exceeds that of the TO-247-4 with external air cooling by 29.1% and with liquid cooling by 7.6%. In addition, due to the significant size advantage of the proposed module, the improvement in packaging heat flux is more pronounced.
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