Estimation of electronic stopping cross sections of 4H-SiC for 2–26 MeV Al random-ion implantations

Abstract Electronic stopping cross sections of 4H-SiC for 2−26 MeV Al random-ion implantations ( S e random ) were estimated from the reported dependence of the projected range on the ion-implantation energy ( E 0 ). The estimated S e random was a couple of times larger than the reported electronic stopping cross section along the 〈0001〉 channel and proportional to the square root of the ion energy ( E ) in the case E < 10 MeV. When E ranged from 10 to 26 MeV, the S e random saturated around 5 × 10 −13 eV cm 2 atom −1 , suggesting that the Bethe-Bloch region, where S e random decreases with E , should exist at E larger than 26 MeV.