外延
光致发光
光电子学
带隙
金属有机气相外延
化学气相沉积
分析化学(期刊)
蓝宝石
宽禁带半导体
基质(水族馆)
兴奋剂
气相
作者
Guifeng Chen,Zhang Yin,Hui Zhang,Luxiao Xie,Zhiwei Xing,Zishuang Cheng,Haoran Li,Yiming Xiao,Haoruo Liang,Huaize Liu,Xie Xinjian,Lifeng Bian,Guodong Liu
标识
DOI:10.1016/j.optmat.2020.110678
摘要
Abstract The UV optical properties of (0 0 2) AlN thin films were studied. Under the excitation of 213 nm laser, there are two emission peaks of AlN in UV-A band with thermal quenching phenomenon. Combined with variable temperature Raman experiment, it is proved that the UV emission of AlN is accompanied by a nonradiative transition in the form of lattice thermal vibration. Density functional theory (DFT) calculations show that donor and acceptor levels can be introduced near the conduction band minimum (CBM)and near the valence band maximum (VBM) by the nitrogen vacancy, respectively. Combined with the annealing experiment, it is proved that the nitrogen vacancy (VN) is the main reason for the ultraviolet luminescence of AlN films. These results are highly relevant for a better understanding of the study of the application of AlN based materials in ultraviolet optical devices.
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