光电探测器
异质结
钙钛矿(结构)
光电子学
材料科学
功率(物理)
光学
物理
化学
结晶学
量子力学
作者
Shikai Yan,Sheng Tang,Qing Li
摘要
A photodetector based on ZnO/CsPbBr 3 /TFB heterojunction has been fabricated. The effect of ZnO film thickness on device performance has been discussed. The device can be operated at 0V and shows the maximum performance with detectivity of 2x10 12 Jones and on/off ratio of 2.4x10 5 at ‐0.62V, showing a low‐power characteristic.
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