Electron mobility in phosphorous doped {111} homoepitaxial diamond

The room temperature Hall electron mobility of phosphorous doped {111} homoepitaxial diamond is investigated experimentally and described theoretically for different doping and compensating center densities. The impurities mobility dependence is established. The mobility is found to be controlled by the lattice scattering mechanisms in low doped material (below 1017 cm−3), by lattice and ionized impurity scattering for moderate doping level (1017 cm−3