铁电性
电场
极化(电化学)
纳米尺度
材料科学
空间电荷
凝聚态物理
光电子学
降级(电信)
化学物理
纳米技术
电子
化学
电介质
电子工程
物理
物理化学
量子力学
工程类
作者
Qianwei Huang,Zibin Chen,Matthew J. Cabral,Feifei Wang,Shujun Zhang,Fei Li,Yulan Li,Simon P. Ringer,Haosu Luo,Yiu‐Wing Mai,Xiaozhou Liao
标识
DOI:10.1038/s41467-021-22355-1
摘要
Failure of polarization reversal, i.e., ferroelectric degradation, induced by cyclic electric loadings in ferroelectric materials, has been a long-standing challenge that negatively impacts the application of ferroelectrics in devices where reliability is critical. It is generally believed that space charges or injected charges dominate the ferroelectric degradation. However, the physics behind the phenomenon remains unclear. Here, using in-situ biasing transmission electron microscopy, we discover change of charge distribution in thin ferroelectrics during cyclic electric loadings. Charge accumulation at domain walls is the main reason of the formation of c domains, which are less responsive to the applied electric field. The rapid growth of the frozen c domains leads to the ferroelectric degradation. This finding gives insights into the nature of ferroelectric degradation in nanodevices, and reveals the role of the injected charges in polarization reversal.
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