Effect of Step Doping Profile and Dual Material Gate Design on β-Ga2O3 for superior RF Performance

In the present work, dual material gate and step doping in channel have been implemented on Beta - Gallium Oxide (βGa2 O3) to investigate its suitability for high performance RF applications. Several device attributes such as drain current, transconductance, intrinsic gate capacitances etc., have been studied which have been further used to evaluate Figure of merits i.e. cut-off frequency and transconductance frequency product etc. Furthermore, the effect of channel thickness on critical parameters such as threshold voltage and ON-state resistance has also been studied. In addition, the results obtained for the proposed device have been compared with the conventional device and it is demonstrated that the proposed device exhibits superior characteristics with improved aforementioned Figure of merits.