Defect passivation and electron band energy regulation of a ZnO electron transport layer through synergetic bifunctional surface engineering for efficient quantum dot light-emitting diodes

Bifunctional engineering leads to passivation of surface defects in ZnO NPs as well as elevation of the conduction band level of ZnO to promote charge balance. State-of-the-art blue QLEDs with an EQE of 16.31% and a T 50 @100 cd m −2 of 1685 h are achieved.