JFET公司
香料
电阻器
电容
非线性系统
非线性模型
电气工程
电子工程
寄生电容
电压
拓扑(电路)
计算机科学
工程类
物理
场效应晶体管
晶体管
量子力学
电极
作者
Milos Skalsky,Stanislav Banáš,V.V. Panko
标识
DOI:10.1109/icicdt.2017.7993510
摘要
This paper presents a resistance model of integrated octagonal-shaped Hall sensor device. The nonlinear voltage dependent, temperature and parasitic junction (leakage & capacitance) effects are modeled using JFET compact model. The model topology consists of eight nonlinear resistor models with two types of resistance. This approach reduces the number of model parameters with sustaining high model accuracy and reduces the modeling time significantly. The JFET compact model is available in many commercial SPICE simulators, e.g. Eldo, Spectre or Hspice.
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