Investigation of local tunneling phenomena in green InGaN‐based LEDs

Abstract The tunneling radiative recombination in green InGaN based Light Emitting Diodes (LEDs) has been studied by micro‐Electroluminescence measurements. It was found that this recombination was very local, which has lateral size less than 1 μm and spectral peak position around 600 nm. Changes of growth conditions led to a reduction in the concentration of these defects, improving the current‐voltage characteristics and slightly enhancing the optical efficiency of green LEDs. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)