Electronic and nonlinear optical properties in AlxGa1−xAs/GaAs Gaussian confinement quantum dot…

In this paper, we analytically study the effect of applied electric field on energy levels and optical properties of a Gaussian confinement quantum dot(QD). The second harmonic generation(SHG), linear and nonlinear optical absorption coefficients(OACs) have been obtained in the way of the compact density matrix and iterative approach. In the one electron approximation, we take into account all possible transition routes, which contribute to the SHG and OACs. The results show that the energy levels and nonlinear optical properties of the dot depend strongly on the applied electric field. Especially, the effects on the SHG and OACs are obviously different contributed by different transition routes. The overall results show that geometric parameters of the Gaussian confinement QD and applied electric field act a very important role in the electronic and optical properties of QD, which maybe play a vital role in related research fields.