High-power broad-band superluminescent diode using selective area growth at 1.5-μm wavelength

Superluminescent diode with selectively grown multi-quantum-well layer was demonstrated. This light source consists of angled facet single-mode waveguide with a rear absorption region. High output power(77-mW), wide spectral bandwidth(71-nm FWHM), and a very small spectral modulation (0.7-dB) were achieved with a short absorption region length.