硅
无定形固体
非晶硅
晶体硅
谱线
材料科学
纳米晶硅
航程(航空)
X射线
结晶学
光谱学
分析化学(期刊)
化学
光学
光电子学
物理
色谱法
量子力学
复合材料
天文
作者
А. И. Машин,A. F. Khokhlov,É. P. Domashevskaya,V. A. Terekhov,Н. И. Машин
出处
期刊:Semiconductors
[Pleiades Publishing]
日期:2001-08-01
卷期号:35 (8): 956-961
被引量:8
摘要
X-ray and ultrasoft X-ray spectroscopy have both been applied to study Si K β and Si L 23 emission spectra of crystalline silicon ( c -Si), amorphous hydrogenated silicon ( a -Si:H), and silicyne (a new allotropic linear-chain form of silicon). Si L 23 spectra of silicyne show three peaks instead of two observed in crystalline and amorphous silicon. The third peak lies in the high-energy range at 95.7 eV, its intensity constituting ∼75% of that of the main peak. An additional peak is also observed in the short-wavelength part of the Si K β spectrum. Such a significant difference in shape between the X-ray spectra of amorphous silicon and silicyne is attributed to the existence of a pronounced π component in the chemical bonds between silicon atoms in silicyne.
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