Electronic and Optoelectronic Applications Based on ReS2

With continuous research into two‐dimensional transition metal dichalcogenides (TMDs), a great number of high‐performance devices are emerging due to the unique structures and versatile properties of TMDs. As a representative of the group‐VII TMDs, rhenium disulfide (ReS 2 ) has attracted increasing attention because the distorted octahedral crystal structure makes it distinctive from more widely known TMDs members, such as MoS 2 and WSe 2 . It features layer‐independent electrical and anisotropic optical properties which are suitable for the applications of field effect transistors (FETs) and photodetectors. This review focuses on the recent research work about the electronic and optoelectronic applications based on novel 2D ReS 2 . In the first part, the unique crystal structures and properties are introduced. This is followed by the various preparation methods. Next, high‐performance FETs and photodetectors based on ReS 2 are presented. Finally, conclusions are drawn and prospects proposed.