X射线光电子能谱
氩
分析化学(期刊)
拉曼光谱
电极
材料科学
离子
纳米尺度
结合能
蚀刻(微加工)
亚稳态
反应离子刻蚀
二硫化钼
相(物质)
光谱学
钼
纳米
电离
原位
光电发射光谱学
化学
氧化物
限制
电化学
作者
Alexandar D. Marinov,Adam J. Clancy,Christopher A. Howard,Patrick L. Cullen
标识
DOI:10.1021/acsanm.5c04608
摘要
High Resolution Image Download MS PowerPoint Slide The two common characterization techniques that can distinguish between the metastable 1T and stable 2H phase of molybdenum disulfide (MoS 2 ) are Raman spectroscopy and X-ray photoelectron spectroscopy (XPS). Argon ion etching within XPS offers the possibility to explore sample composition as a function of depth. However, for 2H MoS 2 samples this results in sample alteration via the creation of sulfur vacancies and leads to local areas of MoS 2- x and 1T/2H MoS 2 . XPS MoS 2- x generation (228.1 eV) and laboratory nanoscale 1T MoS 2 synthesis (228.4 eV) are easily mistaken in XPS, as both signals exhibit downshifted Mo 3d binding energies relative to 2H MoS 2 (229.3 eV). Thus, we applied a four split orbit peak XPS model that enables distinction between MoS 2- x alteration and successful 1T phase synthesis. In argon etching induced MoS 2- x the pristine S 2p peaks remain dominant (162.0 eV) and the S/Mo atomic ratio decreases from 2.5 to 1.1 after electrode ion bombardment. When nanoscale 1T MoS 2 forms during lithiation in a lithium-ion battery, the dominant S 2p peaks are found at lower binding energies (161.5 eV) and the S/Mo atomic ratio is elevated (>2.0). Depth profiling of ex situ 1T/2H MoS 2 electrodes showcases lithiation beyond the electrode surface, clearly distinguished from solely MoS 2- x alteration through the S 2p component percentage, which exceeds the 1T MoS 2 limiting threshold (1T > 13% of S 2p) for ion bombarding of as-cast electrodes.
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