Modeling of Sheet Carrier Density, DC and Transconductance of Novel InxAl1-XN/GaN-Based HEMT Structures

In this paper, we propose a physics-based analytical model of novel InAlN/GaN High Electron Mobility Transistor (HEMT) by considering the quasi-triangular quantum well with minimal empirical parameters. The derived model is compared for different short and long gate length devices. The results are calibrated and verified with experimental data over a full range for gate and drain applied voltages. Significant improvement in n s , drain Current, and transconductance are observed for InAlN HEMT making it suitable for nanoscale and microwave analysis in circuit design. Therefore, the proposed model can deal directly with device/physical parameters, and it can be expressed by a very small number of model parameters.