材料科学
结晶
Crystal(编程语言)
折射率
前线(军事)
光学
质量(理念)
热的
温度梯度
晶体生长
直拉法
结晶学
光电子学
化学
物理
热力学
兴奋剂
量子力学
气象学
计算机科学
程序设计语言
作者
D. S. Pantsurkin,V.N. Shlegel,V. M. Mamedov,M. G. Vasil’ev,V. S. Yuferev
标识
DOI:10.1134/s1063785012050112
摘要
Conditions that ensure reproducible growth of 〈110〉-oriented perfect Bi12SiO20 (BSO) crystals by the low-thermal-gradient Czochralski technique, whereby the entire crystallization front is occupied by the (110) crystal face, have been determined with the aid of numerical simulations. Using the established regime, BSO crystals have been obtained with a diameter of 85 mm, a length of 200 mm, and a mass of 10 kg. The density of dislocations in the crystals does not exceed 10 cm−2, and the refractive index inhomogeneity is below 10−3.
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