Design considerations of intra-step SiGeSn/GeSn quantum well electroabsorption modulators

Theoretical investigation of electro-absorption modulators in the mid-infrared range (>∼2 μm) is performed using asymmetric intra-step quantum wells based on Ge1−η1Snη1/Ge1−η2Snη2 heterostructures with SiGeSn outer barriers. After exploring the parameter space of the Sn content difference and width ratio of the intra-layers, a linear and much larger Stark shift is realized, compared to that of a square quantum well, without an increase of the total structure width. A modulator based on an optimized intra-step quantum well structure with a total well width of 12 nm is theoretically predicted to have both a larger peak shift per unit applied field and a larger absorption change than a 12 nm square quantum well device. By analyzing the device performance based on the two figures of merit: (1) absorption change per applied field and (2) absorption change per applied field squared, and taking 10 dB extinction ratio, a 44% higher bandwidth per volt and 46% lower power consumption per bit are achieved in intra-step than in a square well. Although the swing voltage for a square quantum well can be reduced by using a larger on-set applied field and performance could be improved, we found that the intra-step quantum well using zero on-set still retains its advantages when compared to the square quantum well which uses a 0.5 V on-set voltage.