Accurate determination of contact resistivities (${\rho_{c}}$) below$1 \times 10^{-8}\Omega \cdot \text {cm}^{2}$is challenging. Among the frequently applied transmission line models (TLMs), circular TLM (CTLM) has a simple process flow, while refined TLM (RTLM) has a high$\rho _{c}$accuracy at the expense of a more complex fabrication. In this letter, we will present a novel model—multiring CTLM (MR-CTLM) , which combines the advantages of a simple process and a high$\rho _{c}$extraction resolution. We fabricated ultralow-$\rho _{c}$Ti/n-Si contacts and demonstrated the capability of MR-CTLM to extract the$\rho _{c}$as low as$6.2 \times 10^{-9}~\Omega \cdot {\rm cm}^{2}$with high precision.