Magnetoresistance decay and switching-field change in SiO2–Ni dusted Co/Cu/Co structures

The effect of interfacial planar doping with an insulating granular layer in a sandwiched structure was studied. By inserting a thin SiO2–Ni layer at either the Co/Cu (top) or Cu/Co (bottom) interface in sandwiched Co/Cu/Co structures, the magnetoresistance curve as a function of the magnetic field changed significantly. This change was due to a reduction of interlayer coupling and to a change in the switching mechanism of the magnetizations caused by modification of the interface. In addition, the dusted Co/Cu/Co structures showed flat peaks and small switching fields that would be very useful for practical applications.