Polarity effects in III–V semiconducting compounds

The observed polar effects in III–V compounds are reviewed briefly. Considerations of the model for {111}; type surfaces proposed by Gatos and Lavine(3) are extended to include the observed metallurgical phenomena associated with growth and metallic etching of {111} and{1̄1̄1̄} surfaces. It is concluded that a satisfactory explanation can be proposed which will account for differences in growth and dissolution rates under unconstrained conditions, the development of facets, the incidence of growth twins, dislocation density and dislocation mobilities. The polar nature of {hh1} and {h11} type surfaces is discussed.