霍尔效应
反铁磁性
凝聚态物理
拓扑绝缘体
外延
磁场
材料科学
拓扑(电路)
纳米技术
物理
电气工程
量子力学
工程类
图层(电子)
作者
Kejing Zhu,Yang Cheng,Menghan Liao,Su Kong Chong,Ding Zhang,Ke He,Kang L. Wang,Kai Chang,Peng Deng
出处
期刊:Nano Letters
[American Chemical Society]
日期:2024-02-10
卷期号:24 (7): 2181-2187
被引量:7
标识
DOI:10.1021/acs.nanolett.3c04095
摘要
Recently discovered as an intrinsic antiferromagnetic topological insulator, MnBi2Te4 has attracted tremendous research interest, as it provides an ideal platform to explore the interplay between topological and magnetic orders. MnBi2Te4 displays distinct exotic topological phases that are inextricably linked to the different magnetic structures of the material. In this study, we conducted electrical transport measurements and systematically investigated the anomalous Hall response of epitaxial MnBi2Te4 films when subjected to an external magnetic field sweep, revealing the different magnetic structures stemming from the interplay of applied fields and the material's intrinsic antiferromagnetic (AFM) ordering. Our results demonstrate that the nonsquare anomalous Hall loop is a consequence of the distinct reversal processes within individual septuple layers. These findings shed light on the intricate magnetic structures in MnBi2Te4 and related materials, offering insights into understanding their transport properties and facilitating the implementation of AFM topological electronics.
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