High-performance lateral enhancement-mode β-Ga2O3 MOSFET with a novel superjunction-extended gate structure

Abstract To improve the conduction performance of the lateral enhancement-mode β -Ga 2 O 3 MOSFETs, a novel superjunction-extended gate structure was proposed, leveraging the enhanced gate-induced electron-accumulation effect. This concept was validated and optimized using TCAD simulations. Specifically, a lightly doped thin-channel design was implemented to ensure high-voltage operation and stable enhancement-mode functionality. Furthermore, the device performance is significantly improved by fine-tuning the critical structural parameters such as the channel doping concentration, extended gate thickness, and channel length. Simulation results demonstrate that within the breakdown voltage range of 2.5–6.8 kV, the device achieves a power figure of merit exceeding 12 GW cm −2 , with a peak value of 15.40 GW cm −2 . Additionally, the specific on-resistance remains below 3.5 mΩ·cm 2 , and the maximum output current reaches 1.77 × 10 4 A cm −2 . These performance metrics outperform those of similar devices, providing an efficient, low-loss solution for high-voltage power applications.