带隙基准
硅带隙温度传感器
电压基准
电压
温度系数
材料科学
带隙
光电子学
电气工程
电源抑制比
大气温度范围
功率(物理)
CMOS芯片
跌落电压
开关电源
工程类
物理
气象学
量子力学
作者
Chundong Wu,Wang Ling Goh,Yongkui Yang,Alan Chang,Xi Zhu,Lei Wang
标识
DOI:10.1109/newcas.2016.7604737
摘要
A low power cross-coupled bandgap voltage reference is proposed in this paper. Based on the suggested structure, a 9.8 ppm/°C temperature coefficient bandgap voltage reference across -50°C to 150°C temperature range with 1.8-V supply voltage is achieved. For the help of the proposed cross coupled structure bandgap voltage reference, start-up circuit can be waived from which can save both area and power consumption for the bandgap circuit. Thus, The total power consumption is only 200 nW at room temperature with 1.8-V supply voltage. The proposed circuit can work at supply voltage varying from 1.4 V to 3.0 V while still enabling a wide temperature range bandgap voltage reference. All the simulation results were based on standard 0.18-μm CMOS process.
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