Role of Ionic Processes in Degradation of Wide-Gap II-VI Semiconductor Materials

A role of mobile defects in processes responsible for II-VI compound semiconductor characteristic instability is under consideration.These defects have been shown to be responsible for electron-enhanced reactions in these materials, in particular, shallow donor creation in CdS crystals.Accumulation of mobile defects near dislocations results in some specific effects: anisotropy of conductivity induced by electric field and distortion of edge emission spectrum shape.These effects side by side with electron-enhanced defect reactions have been found to influence considerably semiconductor device characteristics.