Effects of Stealth Dicing Parameters on Singulation Defects and Die Strength

This paper describes the reduction of singulation defects and die strength enhancement in Stealth Dicing before Grinding process. The process was carried on wafers which are 710μm in thickness at a laser wavelength of 1342nm, after the SD (stealth dicing) process, wafers need to be grinded to 60μm with BG (back grinding) method. After SD, laser scattered damage scattered damage and cleavage fracture have been analyzed. After BG, the ratios of singulative dies that have different defects such as silicon dust and kerf defect have been calculated. In this paper, the optimization of the SD process has led to the reduction of the SD-related defects and die strength has also been improved. The kerf loss after SD has been calculated and 100% kerf has been achieved. Besides, die strength has been increased by 19.53%, which can illustrate the high quality of laser singulation.