JFET公司
材料科学
光电子学
异质结
晶体管
范德瓦尔斯力
阈下斜率
场效应晶体管
二极管
电介质
半导体
电压
电气工程
物理
工程类
量子力学
分子
作者
Jian Guo,Laiyuan Wang,You Yu,Peiqi Wang,Yu Huang,Xiangfeng Duan
标识
DOI:10.1002/adma.201902962
摘要
Abstract The minimization of the subthreshold swing (SS) in transistors is essential for low‐voltage operation and lower power consumption, both critical for mobile devices and internet of things (IoT) devices. The conventional metal‐oxide‐semiconductor field‐effect transistor requires sophisticated dielectric engineering to achieve nearly ideal SS (60 mV dec −1 at room temperature). However, another type of transistor, the junction field‐effect transistor (JFET) is free of dielectric layer and can reach the theoretical SS limit without complicated dielectric engineering. The construction of a 2D SnSe/MoS 2 van der Waals (vdW) heterostructure‐based JFET with nearly ideal SS is reported. It is shown that the SnSe/MoS 2 vdW heterostructure exhibits excellent p–n diode rectifying characteristics with low saturate current. Using the SnSe as the gate and MoS 2 as the channel, the SnSe/MoS 2 vdW heterostructure exhibit well‐behavioured n‐channel JFET characteristics with a small pinch‐off voltage V P of −0.25 V, nearly ideal subthreshold swing SS of 60.3 mV dec −1 and high ON/OFF ratio over 10 6 , demonstrating excellent electronic performance especially in the subthreshold regime.
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