闪存
闪光灯(摄影)
可扩展性
非易失性存储器
计算机科学
图层(电子)
存储单元
非易失性随机存取存储器
计算机硬件
嵌入式系统
计算机存储器
半导体存储器
材料科学
电气工程
工程类
内存刷新
晶体管
操作系统
纳米技术
艺术
电压
视觉艺术
作者
Takashi Maeda,Kiyotaro Itagaki,Tomoo Hishida,Ryota Katsumata,Masaru Kito,Y. Fukuzumi,M. Kido,Hiroyasu Tanaka,Yosuke Komori,Megumi Ishiduki,Junya Matsunami,Tomoko Fujiwara,Hideaki Aochi,Yoshihisa Iwata,Yohji Watanabe
出处
期刊:Symposium on VLSI Circuits
日期:2009-06-16
卷期号:: 22-23
被引量:18
摘要
A three-dimensional 16 stacked 1G cell/layer Pipe-shaped Bit-Cost Scalable (P-BiCS) flash memory test chip with 60nm technology has been developed. The effective 1-bit cell size is 0.00082 um2. This paper describes the branched control gate configuration and the new erase operation which are suitable for P-BiCS flash memory. P-BiCS flash memory is one of the most promising candidates for realizing the future T-bit storage device.
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