Analysis of the influence of single event effects on the characteristics for SiC power MOSFETs

Because of properties of high speed, high breakdown voltage, low leakage current and high temperature resistance, silicon carbide (SiC) power devices can be used as processing units in advanced space high-power power system and high temperature propulsion power. However, the single event gate-rupture and burn-out on silicon carbide (SiC) power devices is main problem in space application for its high voltage when comes to radiation particles, such as SiC power MOSFETs. For the safe operation of SiC power MOSFETs in space, the Safe Operating Area (SOA) must be confirmed. In this paper, the single event effects testing of SiC power MOSFETs devices under different drain-source voltages are studied. It was found that the threshold voltage of the devices reduced and the drain-source voltage increased after the single event effect testing. Based on the analysis of different testing data, The safe operating voltage of the device is obtained. The the Drain-Source on-State resistance characteristics from being tested samples were provided. Suggestion on SiC power MOSFETs devices for space application was given at last.