Design and simulation studies of high voltage lateral diffused metal oxide semiconductor field effect transistor for automotive application

There has been rapid increasing demand on high voltage (HV) metal oxide Semiconductor Field Effect Transistor (MOSFET) devices that can be integrated with low Voltage (LV) Complimentay Metal Oxide Semiconductor Field-Effect Transistor (CMOS) analog and digital circuits. Integration of LV and HV devices on the same chip can make technology become more compatible by reducing the manufacturing cost and increase reliability. In automative perspective, the HV requirement is determined by car battery voltage and load dump. The standard set of load dump in the 42v system is 58V. Thus, evolution towards 60V operating voltage will probably occur.