Nanoimprint lithography guiding templates for advanced magnetic media fabrication

纳米压印光刻 材料科学 制作 抵抗 纳米技术 模板 平版印刷术 电子束光刻 带图案的介质 蚀刻(微加工) 下一代光刻 干法蚀刻 纳米光刻 光电子学 图层(电子) 复合材料 粒度 医学 替代医学 病理
作者
Daniel Staaks,Yautzong Hsu,Kim Y. Lee,Philip Steiner,Zhaoning Yu,Jason Wu,Shuaigang Xiao,XiaoMin Yang,Thomas Y. Chang
出处
期刊:Journal of vacuum science and technology [American Vacuum Society]
卷期号:42 (1) 被引量:3
标识
DOI:10.1116/6.0003210
摘要

Nanoimprint lithography presents unique opportunities for advanced magnetic storage media with ordered bit arrangements such as bit patterned media or heated dot magnetic recording. Providing sub-10 nm resolution and full disk imprinting capability, UV-nanoimprint lithography based on rigid quartz templates bears the entitlement for patterned recording media manufacturing with high throughput at low cost. However, a key challenge is the fabrication of the high-resolution template that can transfer the desired pattern onto the disk with high fidelity and low line edge roughness. In this article, we present fabrication routes and overcome challenges to the fabrication of quartz templates suitable for self-alignment and guiding purposes to be used for template replication toward full disk imprints. Guiding patterns down to 40 nm pitch are prepared using a rotary electron beam lithography tool. We compare three different process approaches to fabricate an etching mask for patterning the quartz. Two methods target chromium patterning, one with traditional lift-off and another by dry etching, both using an e-beam resist mask. The third approach is based on the development of a carbon-based Tri-layer hard mask. The template pattern profile is optimized for imprint-suitable sidewall angles using dry etching in a CF4/O2 chemistry. The templates were characterized using scanning electron microscopy and atomic force microscopy to evaluate the quality of the transferred pattern as well as line edge roughness. Our results show that the Tri-layer process using carbon resulted in the lowest line edge roughness of ≈0.65 nm at the imprinted disk level. In addition, we show that Tri-layer masking allowed for the use of conventional ZEP e-beam resist and fast writing speeds, while gaining high selectivity during quartz patterning.
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