Optimization of a triazine-based acceptor (CN-T2T) as the electron transport layer for highly efficient near-infrared perovskite light-emitting diodes

High EQE of 18.01% and radiance of 366.76 W sr −1 m −2 were achieved by simply controlling the thickness of uncommon exciplex electron acceptor 3′,3′′′,3′′′′′-(1,3,5-triazine-2,4,6-triyl) tris(([1,1′-biphenyl]-3-carbonitrile)) (CN-T2T) as alternate electron transport layer for MAPbI 3 perovskite LED.